Laboratory  of Optoelectronic devices

Staff of the laboratory:
                                            Head:   Khudaverdyan Surik, dr. prof. 

                        Dokholyan Janna,   Dr. assoshieidit  prof.,

                        Kocharyn Hasmin, magistros

                         Kocharyan Ashot, Dr.

The Direction of the Laboratory Activities
 

Multifunctional Semiconductor Photo detectors
 

 New types of multifunctional photo detectors on the basis of monolithic semiconductor structure with two opposite directed potential barriers on both sides of  the high resistance base are developed.

 The principle of operation of photo detectors is rather multipurpose.  Different semiconductor materials can be used for their manufacturing. The width of the forbidden gap of the material, at that, determines the spectral area of the radiation registration, and the double-barrier structure provides a high spectral resolution.

       On basis of this principle, we can develop a new type of a selective filterless photo detector of the UV and visible areas of the spectrum, which allows to select narrow strips of the electromagnetic radiation spectrum and to register the intensity of the electromagnetic radiation in that strip. The photo detector is able to register weak signals of the UV area of the spectrum against the background of the powerful visible and infra-red radiations of the Sun.

      The proposed photo detector can also serve as a multiple-wavelength-channel detector for the spectrometer. It is compact and is relatively cheap in manufacturing.

      The development in question will contribute to the solution of the problems, related to biomedicine, preservation of the environment and the problems of global safety. Particularly, it will be used as an active element for studying ozone holes, registering the flame of the rockets, etc.

 Publications:

 1. Григорян Г. Э.,  Григорян В. В., Гарибян К. Б., Худавердян С. Х. Структуры М-П/П-М с инверсией знака фототока // Изв. НАН и ГИУА РА,  т. L, N 2, 1997, стр. 143 - 147.

 2. Григорян Г. Э.,  Григорян В. В., Гарибян К. Б., Худавердян С. Х. О механизме   фотопроводимости двухбарьерных М-П/П-М структур // Изв. НАН и ГИУА  РА, ТН, т. L, N 1, 1998, стр. 112 - 115.

 3. Григорян Г. Э., Дохолян Ж. Г., Худавердян С. Х. Высокочувствительные датчики  ионизирующего излучения на основе  // Материалы первой национальной конф. Полупроводниковая микроэлектроника, 22-23 мая, 1997, Дилижан.: Изд. ЕГУ, Ереван, 1997,  стр. 137 - 140.

4. Grigoryan G. E. , Pogosyan L. N., Khudaverdyan S. Kh. Detectors of  Electromagnetic Radiation Based on the Double-Barrier Structures // Applied Electromagnetism, V2 , num 2 , 1999, p. 43 - 50.

5. Grigoryan G. E., Pogosyan L. N., Khudaverdyan S. Kh.  The Creation and Investigation of Photoelectric Features of the Double – Barrier Structures With Narrow Recrystallized Base. // Materials Conference on Optoelectronic and Microelectronic Materials And Devices. IEEE The University of  Western  Australia, 1998, p. 242 - 244.

6. Аракелян А. А., Дохолян Ж. Г., Худавердян С. Х., Нинеуйс Д. Э., Агашян Р. В., Мурадян П. М., Айрапетян К. З., Еганян Э, Г,  Оптоэлектронный анализатор растворов // Моделирование, Оптимизация, Управление. ГИУА, выпуск 1, 1998, стр.12 - 15.

7. Худавердян С. Х. Двухбарьерные фотоприемные структуры с высокоомной прослойкой на основе // Моделирование, Оптимизация, Управление. ГИУА, Выпуск 2, 1999, стр. 82 - 88.

8. Pogosyan L. N., Khudaverdyan S. Kh.  Tendencies of Development      Photodetectors with Regulated Spectral Photosensitivity. // Conversion Potential of        Armenia and ISTC Programs, International seminar, Yerevan, 2000, Proceedings, рart II,  р. 163 - 166.

9. Khudaverdyan S. Kh, Harutyunyan H. Study of Photo-Emission Current Impact on  Spectral Characteristics of Double Barrier Photo-Reseiving Structure // 23^rd International Conference on Miсroelectroniсs (MEL 2002) Vol. 1 Nis,  Yugoslavia, 12-15 May, IEEE Catalog Number  02TH8595C, 2002,  р. 339-341

10. Khudaverdyan S. Kh, The Influence of Rear Junction’s Рeflecting Properties on Photo-Detecting Сharacteristics of Double Barrier Stractures. // Third International Conference on “New developments in photodetectors” Beaune, France,  June 17-21, 2002,  p. 129.

11. Худавердян С. Х. Особенности спектрального распределения фототока в                структурах на основе  // Изв. НАН и ГИУА РА, сер. Техн. Наук,       т.LVI,  N 1, 2003, стр. 142 - 148.

12. S. Kh. Khudaverdyan, Photo-detecting  characteristics  of  double  barrier structures //   ELSEVIER, Nuclear Inst. and Methods in Physics Research, A, vol 504/1-3, 2003, p. 350 – 353.

13.  Худавердян  С.  Х.,  А.  А.  Арутюнян,   Дохолян  Ж.  Г.,   Кочарян  А.  А. О     возможности определения ширины ОПЗ в двухбарьерных структурах

14. Khudaverdyan  S., Kocharyan  A., Dokholyan J. Photoreceiver structures with the extended       functional  potentiality on the CdTe base // J. Phys. D: Applied Physics, V38, num 2, 2005, p. 272-275.

15. Khudaverdyan S.Kh., Dokholyan J.G., Kocharyan A.A., Kechiyantz A.M. and Khudaverdyan D.S., Khudaverdyan. On functional potentiality of photodiode structures with a high-resistance layer //. ELSEVIER, J. Solid State Electronics. V. 49, Issue 4, 2005, p. 634-639.

16.  S. Kh Khudaverdyan, J. G. Dokholyan, A. A. Kocharyan, D. S. Khudaverdyan. “New type of photodetectors with selective spectral photosensitivity”. Conference on “New developments in photodetection” Beaune, France,  June 19-24, p. 73, 2005.

17. S.Kh. Khudaverdyan, J.G. Dokholyan, A.A. Kocharyan, D.S. Khudaverdyan. “Filterless Si-bazed selective photodetector for monitoring ultraviolet radiation”. "Herald SEUA. The Series "Modeling, optimization, management", 2005, 2, p. 68-73.