New types of multifunctional photodetectors on the basis of monolithic semiconductor structure with two opposite directed potential barriers on both sides of  the highresistance base are developed.

The principle of operation of photodetectors is rather multipurpose.  Different semiconductor materials can be used for their manufacturing. The width of the forbidden gap of the material, at that, determines the spectral area of the radiation registration, and the double-barrier structure provides a high spectral resolution.

On basis of this principle, we can develop a new type of a selective filterless photodetector of the UV and visible areas of the spectrum, which allows to select narrow strips of the electromagnetic radiation spectrum and to register the intensity of the electromagnetic radiation in that strip. The photodetector is able to register weak signals of the UV area of the spectrum against the background of the powerful visible and infra-red radiations of the Sun.

The proposed photodetector can also serve as a multiple-wavelength-channel detector for the spectrometer. It is compact and is relatively cheap in manufacturing.

The development in question will contribute to the solution of the problems, related to biomedicine, preservation of the environment and the problems of global safety. Particularly, it will be used as an active element for studying ozone holes, registering the flame of the rockets, etc.